PART |
Description |
Maker |
HY5DU283222AF-2 HY5DU283222AF-25 HY5DU283222AF-33 |
128M(8Mx16) GDDR SDRAM 128M(4Mx32) GDDR SDRAM
|
HYNIX[Hynix Semiconductor]
|
K4D263238G-GC K4D263238G-GC2A K4D263238G-GC33 K4D2 |
128Mbit GDDR SDRAM
|
Samsung semiconductor
|
HY5DW113222FMP-2 HY5DW113222FMP-22 HY5DW113222FMP- |
512M(16Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
HY5DU121622CTP-4 HY5DU121622CTP-5 HY5DU121622CTP-6 |
512Mb(32Mx16) GDDR SDRAM
|
Hynix Semiconductor
|
HY5DU573222AFM-33 HY5DU573222AFM-36 HY5DU573222AFM |
256M(8Mx32) GDDR SDRAM
|
Hynix Semiconductor
|
HY5DU561622CTP-28 HY5DU561622CTP-33 HY5DU561622CTP |
256M(16Mx16) gDDR SDRAM
|
Hynix Semiconductor
|
HY5DS113222FM HY5DS113222FM-4 HY5DS113222FMP-4 HY5 |
512M(16Mx32) GDDR SDRAM 16M X 32 DDR DRAM, 0.6 ns, PBGA144
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
W9412G2IB W9412G2IB4 W9412G2IB-6I |
1M × 4 BANKS × 32 BITS GDDR SDRAM Double Data Rate architecture; two data transfers per clock cycle 4M X 32 DDR DRAM, 0.7 ns, PBGA144
|
Winbond WINBOND ELECTRONICS CORP
|
K4D263238G-GC360 K4D263238G-GC33 K4D263238G-GC2A0 |
4M X 32 DDR DRAM, 0.6 ns, PBGA144 FBGA-144 128Mbit GDDR SDRAM 128Mbit GDDR SDRAM内存 4M X 32 DDR DRAM, 0.55 ns, PBGA144 FBGA-144 4M X 32 DDR DRAM, 0.55 ns, PBGA144 LEAD FREE, FBGA-144
|
Sensitron Semiconductor Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HY5DU281622ETP-25 HY5DU281622ETP-26 HY5DU281622ETP |
128M(8Mx16) gDDR SDRAM 8M X 16 DDR DRAM, 0.6 ns, PDSO66 8M X 16 DDR DRAM, 0.55 ns, PDSO66
|
HYNIX SEMICONDUCTOR INC
|
HY5V66GF HY5V66GF-H HY5V66GF-P |
SDRAM - 64Mb 4 Banks x 1M x 16Bit Synchronous DRAM 4Mx16|3.3V|4K|H|SDR SDRAM - 64M x16 SDRAM x16内存
|
Hynix Semiconductor TT electronics Semelab, Ltd.
|